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CRD-60DD12N: 60 kW Interleaved Boost Converter

  • Demonstration of new 1200 V, 75 mΩ C3MTM SiC MOSFET and it’s parallel operation in a 60 kW Interleaved Boost Converter
  • 60 kW Interleaved Boost Converter demo board is based on four 15 kW Interleaved Boost Stages and each stage is using Cree’s C3MTM CGD15SG00D2 isolated Gate Driver Board.
  • Cree’s 60 kW Interleaved Boost Converter demo board can accept 470VDC - 800VDC as an input and provide 850 VDC at the output with a peak efficiency of 99.5% and a power density of 127W/in3
  • Targeting high voltage and high power density applications such as Solar Power Generation
  • Documentation includes a bill of materials (BOM), schematic, board layout and the application note
  • Download application note
  • Download presentation
     

CRD-06600FF10N: 6.6 kW Bi-Directional EV On-Board Charger

  • Demonstration of 1000 V, 65 mΩ C3MTM SiC MOSFET in a 6.6 kW Bi-Directional EV On-Board Charger
  • 6.6 kW Bi-Directional EV On-Board Charger demo board consist of a Bi-Directional Totem-Pole PFC (AC/DC) stage and an Isolated Bi-Directional DC/DC stage based on CLLC topology with a variable DC Link Voltage
  • Cree’s 6.6 kW Bi-Directional EV On-Board Charger demo board can accept 90VAC-265VAC as an input and provide 250VDC-450VDC at the output with > 96% of efficiency in both charging and inversion modes
  • Main target applications of this demo board include: EV Charging industry and the Energy Storage industry
  • Documentation includes a bill of materials (BOM), schematic, board layout and the application note
  • Download application note
  • Download presentation
  • Download User Guide
     

CRD-15DD17P: Wide Input Voltage Range (300 VDC – 1200 VDC) 15W Flyback Auxiliary Power Supply Board

  • Demonstration of the efficient operation of Cree's 1700 V, 1Ω SiC MOSFET with an availability of high blocking voltage and high creepage distance (~7mm)
  • Cree's 15 W flyback auxiliary power supply board can accept a wide range of AC or DC input voltage (480 VAC – 530 VAC) or (300 VDC—1200 VDC) and provide 12 VDC at the output with an exceptional efficiency of 85%
  • Simple control approach has been utilized to reduce the overall complexity and cost of the system
  • High-frequency operation of Cree'ss 1700 V, 1Ω SiC MOSFET has been demonstrated as well that helps in reducing form factor of the board significantly.
  • Targeting high voltage applications such as motor drives, solar power, traction, and energy storage
  • Documentation includes bill of materials (BOM), schematic, board layout, application note and a power point presentation
  • Download application note
  • Download presentation
  • Available for purchase
     

CRD-02AD09N: 2.2 KW, High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with Cree's (C3MTM) SiC MOSFET (TO-263-7)

  • Highly efficient and low cost solution of bridgeless totem-pole PFC topology based on Cree’s (C3MTM) 900 V SiC MOSFET in a TO-263-7 Package
  • Comfortably achieve Titanium standard by having 98.5% efficiency while THD < 5% under all load conditions
  • Innovative resistor based current sensing solution
  • Distortion less inductor current at zero crossing during all load conditions
  • Reduced Bill of Material (BOM) by the use of general purpose diodes in place of low frequency switches
  • Documentation includes bill of materials (BOM), schematic, board layout, application note and power point presentation
  • Download application note
  • Download presentation
  • Available for purchase
     

KIT8020-CRD-5FF0917P-2: Evaluation Board for Cree’s (C3MTM) SiC MOSFET in a TO-247-4 Package

  • Evaluate and optimize the steady state and switching performance of 3rd generation (C3MTM) SiC MOSFETs in a TO-247-4 package
  • Analysis of half bridge evaluation board in various topologies i.e. Buck converter, Boost converter etc.
  • Two dedicated gate drivers available for each (C3MTM) SiC MOSFET
  • Includes (2) 1200V 75mΩ (C3MTM) SiC MOSFETs in a TO-247-4 Package with the testing hardware
  • Documentation includes bill of materials (BOM), schematic, board layout, application note and power point presentation
  • Download application note
  • Download presentation
  • Available for purchase
     

CRD-20DD09P-2: 20 KW FULL BRIDGE LLC RESONANT CONVERTER USING 1KV SIC MOSFET

  • Evaluate system level performance of Cree’s (C3MTM) 1000 V, 65 mΩ SiC MOSFETs in a 20 kW full bridge LLC resonant converter.
  • Demonstration of efficient parallel operation of Cree’s (C3MTM) 1000 V, 65 mΩ SiC MOSFETs
  • The 20 kW full bridge LLC resonant converter can accept (650 VDC - 750 VDC) as an input and provide (300 VDC – 550 VDC) at the output with a peak efficiency of 98.4%
  • Targeting high power density applications such as fast DC chargers for electric vehicles (EV)
  • Documentation includes bill of materials (BOM), schematic, board layout and the application note
  • Download application note
     

CRD-060DD17P-2: Auxiliary Power Supply Evaluation Board for C2M1000170J Surface-Mount SiC MOSFET

  • Single-end HV flyback design, based on a Cree 1700V, 1 Ohm, 7L-D2PAK MOSFET
  • Reduce bill of materials cost by replacing two silicon MOSFETs with a single 1700V switch
  • Reduce manufacturing costs by converting to 1700V surface mount switch with no need for heat sink
  • Vin = 300-1000V, Vout = 12V/4A, 12V/0.1A
  • Reference design includes bill of materials, schematic file, transformer specifications, application note, design files, and PowerPoint presentation
  • Available for purchase
     

​CRD-060DD12P: 60W Aux Supply with 1700V SiC MOSFET

  • 60W single-end HV flyback design, based on a Cree 1700V, 1 Ohm MOSFET
  • Uses single C2M1000170D 1700V MOSFET in TO-247-3 package

  • Vin = 200-1000V, Vout = 12V/4.5A, 5V/0.5A, -12V/0.25A
  • Reference designbill includes of materials, schematic file, transformer specifications, application note, design files, and PowerPoint presentation
  • Presentation contains efficiency calculations, thermal images, and sample waveforms
  • Available for purchase
     

CRD-8DD12P: 8kW ZVS Converter with SiC MOSFETs

  • High frequency ZVS LLC resonant full bridge (FB) DC/DC converter
  • SiC MOSFET-based
  • Reference design includes bill of materials, quick-start guide, application note, design files, and PowerPoint presentation
  • Presentation includes efficiency calculations, thermal images, and sample waveforms
  • Available for purchase

KIT8020-CRD-8FF1217P-1: 1200V MOSFET Evaluation Kit

  • Learn how to optimize a 1200V MOSFET solution for EMI, ringing and drive requirements.
  • Includes (2) 1200V 80mΩ SiC MOSFETs &  (2) 1200V/20A SiC Schottky diodes, plus testing hardware.
  • Quickly prototype MOSFET and IGBT power converter topologies up to 25 kW
  • Download user manual or watch our video
  • Available for purchase

10kW Boost Converter

  • 100kHz, 10kW interleaved boost converter designed with SiC MOSFET
  • Reference design includes bill of materials, schematic, board layout, technical article, design files, and PowerPoint presentation
  • Presentation contains efficiency calculations, thermal images, and sample waveforms

CRD-50DD12N: 50kW Boost Converter

  • SiC MOSFET-based converter for PV applications
  • 4-phase interleaved 
  • Vin = 400-600V, Vout = 800V 
  • Reference design includes schematic and detailed PowerPoint presentation
  • Presentation includes efficiency calculations, thermal images and sample waveforms.
  • Available for purchase

Terms:  By accepting the reference designs from Cree, Inc. ("Cree"), you on behalf of your organization (or you personally, if you are requesting the model for personal use) agree to the following conditions of its use: 1. The reference design files are provided “AS IS”, and Cree disclaims any warranty either express or implied in connection with the files, including but not limited to any warranty  2. In no event, will Cree be liable for any damages arising from the use of the reference design files, regardless of the legal theory or any prior knowledge of Cree; and 3. Cree retains all copyrights and other intellectual property rights.